2N6667G

Single Bipolar Transistors Overview

The onsemi 2N6667G is a PNP Darlington transistor housed in a TO-220AB through-hole package. It features a maximum continuous collector current of 10 A and a collector-emitter voltage rating of 60 V. The device offers a minimum DC current gain (hFE) of 1000, with a maximum power dissipation of 65 W. Operating temperatures range from -65 °C to +150 °C.

Single Bipolar Transistors Feature Summary

• High current amplification capability via integrated Darlington configuration
• Robust thermal management suitable for high-power applications

Single Bipolar Transistors Applications

• High-current switching circuits
• Power amplifier stages
• Motor control interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer source, as historical records indicate production by Intersil or Renesas before acquisition by onsemi. Confirm RoHS compliance status directly with the supplier, as legacy versions may differ. Ensure the TO-220AB package matches your PCB footprint requirements before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when high current gain is required without external driver transistors. The TO-220AB package facilitates direct heatsinking for high-power dissipation scenarios. Verify that the 60 V collector-emitter voltage meets the circuit's peak operating conditions.

Single Bipolar Transistors Part Context

This part belongs to the family of high-power bipolar junction transistors designed for robust industrial and consumer electronics applications. The Darlington structure allows for significant current control using minimal base drive current, simplifying driver circuit design compared to standard single-transistor configurations.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.