Single Bipolar Transistors 2N6668 product image

2N6668

  • Description:TRANS PNP DARL 60V 10A TO-220
  • Series:-

SKU:9c7450e47b64 Category: Brand:

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2N6668 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP DARL 60V 10A TO-220. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N6668

  • Description:TRANS PNP DARL 60V 10A TO-220
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:PNP - Darlington
  • Current - Collector (Ic) (Max):10:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:3V @ 100mA, 10A
  • Current - Collector Cutoff (Max):1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 1A, 5V
  • Power - Max:65 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N6668

2N6668

Single Bipolar Transistors Overview

The onsemi 2N6668 is a PNP silicon power Darlington transistor housed in a TO-220AB flange mount package. It features a maximum collector current of 10 A and a collector-emitter breakdown voltage of 80 V. The device integrates a built-in diode and resistor within its single-element configuration. Designed for switching applications, it offers a minimum DC current gain of 100 and supports an operating temperature up to 150 °C with a maximum power dissipation environment of 65 W.

Single Bipolar Transistors Feature Summary

  • Integrated Darlington structure with built-in diode and resistor
  • High DC current gain suitable for amplification and switching
  • Electrically isolated overmold package eliminates need for isolating washers

Single Bipolar Transistors Applications

  • General-purpose amplifier circuits requiring high gain
  • Switching applications where mounting surface isolation is required
  • Isolated package applications avoiding chassis grounding issues

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer source, as historical data links this part to Harris Semiconductor before industry consolidation. Confirm RoHS compliance status and lead times directly with authorized distributors or onsemi, as availability varies by production era. Ensure the TO-220AB package matches thermal requirements.

Single Bipolar Transistors Selection Notes

Select the 2N6668 when a PNP Darlington configuration with integrated protection components is needed. Its high current capability and voltage rating suit moderate-power switching tasks. Consider the complementary NPN MJF6388 for matched pairs in isolated systems requiring electrically separated heatsinking without additional hardware.

Single Bipolar Transistors Part Context

This component belongs to the family of complementary silicon power Darlingtons designed for applications requiring electrical isolation between the device mounting surface and the heatsink or chassis. It serves as a direct replacement for popular legacy parts like the TIP107, offering similar performance in a standardized TO-220AB package.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitutes include the MJF6388 (complementary NPN) and legacy equivalents such as the TIP107. Verify pinout compatibility and thermal resistance specifications when substituting.

2N66682N6668

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