2N6678

Single Bipolar Transistors Overview

The Microchip Technology 2N6678 is a silicon NPN power bipolar junction transistor designed for high-voltage applications. It features a maximum collector-emitter voltage of 400 V and a collector-base voltage of 650 V, with an emitter-base voltage rating of 8 V. The device supports a continuous DC collector current of 15 A and dissipates up to 6 W of power. It operates within a temperature range of -65 °C to +200 °C and utilizes a through-hole TO-204AA package.

Single Bipolar Transistors Feature Summary

• High-voltage capability with a 400 V collector-emitter breakdown rating
• Robust thermal performance supporting operation up to 200 °C junction temperature
• Qualified per MIL-PRF-19500/538 standards for reliability

Single Bipolar Transistors Applications

• Military-grade switching circuits
• High-voltage power regulation systems
• Industrial control equipment requiring ruggedized components

Single Bipolar Transistors Procurement Notes

Verify the specific revision level and qualification grade (JAN, JANTX, etc.) against the official datasheet before procurement. Confirm that the required military specifications align with the ordered part number. Ensure proper handling procedures are followed due to the through-hole package type and sensitivity to electrostatic discharge during installation.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor with a 400 V rating is required. Consider the 15 A current capacity and 6 W power dissipation limits relative to the thermal management capabilities of the target application. Verify compatibility with the TO-204AA footprint and ensure the operating environment stays within the specified -65 °C to +200 °C range.

Single Bipolar Transistors Part Context

The 2N6678 belongs to a family of power transistors qualified under MIL-PRF-19500/538. It shares design similarities with related parts like the 2N6676 and 2N6691, differentiated primarily by their voltage ratings. This specific model provides a balance of high voltage blocking and moderate current handling suitable for demanding electronic environments.

Single Bipolar Transistors Replacement Considerations

The 2N6676 serves as a lower-voltage alternative within the same qualified series. Verify that the reduced collector-emitter voltage rating of the substitute meets the circuit requirements.