2N6689

Single Bipolar Transistors Overview

The Microchip Technology 2N6689 is a silicon NPN power bipolar junction transistor (BJT) designed for high-voltage, high-current applications. It features a collector-emitter breakdown voltage of 350V and a continuous collector current rating of 15A. The device is housed in a TO-204AA (TO-3) metal case package, suitable for through-hole mounting. With a maximum power dissipation of 175W and a transition frequency of 3MHz, it supports robust switching performance. The component operates within a junction temperature range of -65°C to 200°C, ensuring reliability under demanding thermal conditions.

Single Bipolar Transistors Feature Summary

• High-voltage capability with 350V collector-emitter breakdown
• High-current handling up to 15A continuous collector current
• Robust power dissipation rated at 175W in TO-3 package
• Extended operating temperature range up to 200°C junction temperature

Single Bipolar Transistors Applications

• High-voltage switching circuits
• Power amplifier stages
• Industrial motor control systems
• High-power DC-DC converters

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturing lot and quality certification level required for your application, as this component may be produced under various military or commercial specifications. Confirm the exact pinout configuration and thermal resistance values from the official datasheet before integration. Ensure that the supplier provides traceability documentation consistent with your procurement standards. Check for any recent product change notifications regarding packaging or assembly site modifications.

Single Bipolar Transistors Selection Notes

Select the 2N6689 when designing circuits requiring high voltage blocking and substantial current handling in a single package. Its TO-3 metal case offers superior heat dissipation compared to plastic packages, making it ideal for high-power density designs. Consider the 3MHz transition frequency for medium-speed switching applications. Evaluate the thermal management requirements carefully, given the 175W power rating, to ensure the junction temperature remains within the specified 200°C limit during operation.

Single Bipolar Transistors Part Context

The 2N6689 belongs to Microchip's legacy lineup of high-power discrete semiconductors. It is part of the broader 2N series of transistors known for ruggedness and high voltage tolerance. This component is often used in industrial and aerospace applications where reliability under extreme electrical and thermal stress is critical. It serves as a fundamental building block for power electronics requiring direct drive capabilities without intermediate amplification stages.

Single Bipolar Transistors Replacement Considerations

Consult the official Microchip datasheet for cross-reference information. Potential substitutes may include other NPN power transistors in the TO-3 package with comparable Vceo and Ic ratings, such as the 2N6677, provided pin compatibility and thermal characteristics are verified. Always validate electrical parameters against the original design requirements before substitution.