2N6714 TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N6714 TIN/LEAD is an NPN silicon plastic power transistor housed in a TO-237 case. It features a collector-emitter voltage of 30V and a continuous collector current of 2.0A. The device supports a maximum power dissipation of 1.0W at ambient temperature, rising to 2.0W with case cooling. Operating junction temperatures range from -65°C to +150°C. Electrical characteristics include a minimum DC current gain (hFE) of 50 at 1.0A collector current and a transition frequency (fT) ranging from 50MHz to 500MHz.

Single Bipolar Transistors Feature Summary

• Designed for general purpose power amplifier and switching applications
• Complementary silicon plastic construction
• Tin/Lead plating option available via specific ordering suffix

Single Bipolar Transistors Applications

• General purpose power amplifiers
• Electronic switching circuits

Single Bipolar Transistors Procurement Notes

Verify the exact part number includes the TIN/LEAD suffix as specified. Confirm availability status, as the TO-237 package series has been classified as End of Life by the manufacturer. Check for final purchase order deadlines and last-time buy dates associated with the discontinuation notice. Ensure compatibility with existing leaded soldering processes if required by the design specifications.

Single Bipolar Transistors Selection Notes

Select this component when a standard NPN power transistor with 2A capability and 30V rating is required. Consider the TO-237 package constraints and thermal resistance values for heat dissipation planning. Verify that the tin/lead plating meets environmental or regulatory requirements for the specific application environment before finalizing the selection.

Single Bipolar Transistors Part Context

This component belongs to the complementary silicon plastic power transistor series manufactured by Central Semiconductor Corp. It is paired with PNP variants such as the 2N6726. The device utilizes a three-terminal configuration typical of small-signal power transistors, designed for robust performance in discrete electronic circuits requiring moderate power handling capabilities.

Single Bipolar Transistors Replacement Considerations

MPS650

Single Bipolar Transistors FAQ

What is the maximum collector-base voltage for the 2N6714?

The maximum collector-base voltage (VCBO) is 40V.

How is the tin/lead plating specified for this part?

The tin/lead plating is indicated by adding the suffix 'TIN/LEAD' to the part number when ordering.

What is the thermal resistance junction-to-case value?

The thermal resistance junction-to-case (θJC) is 62.5 °C/W.