Single Bipolar Transistors 2N6715-18 TIN/LEAD product image

2N6715-18 TIN/LEAD

$0.53
  • Description:TRANS NPN 40V 2A TO-237
  • Series:-

SKU:c4b72d5c0334 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

2N6715-18 TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is TRANS NPN 40V 2A TO-237. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N6715-18 TIN/LEAD

  • Description:TRANS NPN 40V 2A TO-237
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 100mA, 1V
  • Power - Max:1 W
  • Frequency - Transition:500MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-237AA
  • Supplier Device Package:TO-237
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N6715-18 TIN/LEAD

2N6715-18 TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N6715-18 TIN/LEAD is an NPN silicon plastic power transistor housed in a TO-237 case. It features a collector-emitter voltage of 40 V and a continuous collector current rating of 2.0 A. The device supports a junction temperature range from -65 to +150 °C with a thermal resistance of 62.5 °C/W at the case. Electrical characteristics include a minimum DC current gain (hFE) of 50 at 1.0 A, a transition frequency up to 500 MHz, and a collector-base breakdown voltage of 50 V.

Single Bipolar Transistors Feature Summary

  • Designed for general purpose power amplifier and switching applications
  • Complementary silicon plastic construction
  • Hermetically sealed lead frame configuration

Single Bipolar Transistors Applications

  • General purpose power amplifiers
  • Switching circuits

Single Bipolar Transistors Procurement Notes

Verify component status before ordering as this product has been classified as End of Life by the manufacturer. Confirm availability through authorized distributors or direct supplier channels. Ensure procurement processes account for potential supply constraints associated with discontinued components.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring an NPN power transistor with specific voltage and current ratings within the TO-237 package. Evaluate thermal management requirements based on the specified thermal resistance values. Consider complementary PNP variants for push-pull configurations.

Single Bipolar Transistors Part Context

This part belongs to the Central Semiconductor 2N6714/2N6715 series of complementary silicon plastic power transistors. The series includes both NPN and PNP types designed for robust performance in power handling scenarios. The TO-237 package provides a standardized form factor for through-hole mounting.

Single Bipolar Transistors Replacement Considerations

Official documentation lists MPS650 as the replacement part number for the 2N6715 series.

2N6715-18 TIN/LEAD2N6715-18 TIN/LEAD
$0.53
Buy Now