2N6724

Single Bipolar Transistors Overview

The onsemi 2N6724 is a silicon NPN Darlington power transistor designed for medium-power applications. It features a collector-emitter voltage (VCEO) of 40 V and a continuous collector current rating of 1 A. The device utilizes a TO-237 package, also known as TO-92, suitable for through-hole mounting. Key electrical specifications include a maximum DC collector current of 1 A, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 5 V. The component operates within a temperature range of -65°C to +150°C junction temperature.

Single Bipolar Transistors Feature Summary

• High current gain capability inherent to the Darlington configuration
• Robust thermal performance with a wide operating temperature range up to 150°C
• Designed for reliable operation in medium-power switching and amplification circuits

Single Bipolar Transistors Applications

• General-purpose switching applications
• Low-power amplifier stages
• Driver circuits for relays or small loads

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer datasheet when sourcing, as the 2N6724 designation is used by multiple vendors including Zetex and Diodes Incorporated. Confirm that the received component matches the 40V VCEO and 1A IC ratings specified by onsemi. Ensure the package type is correctly identified as TO-237/TO-92 to avoid mechanical fit issues. Cross-reference pinouts if substituting from other manufacturers, as lead configurations may vary slightly between brands despite the standardized case outline.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring moderate current handling with high input impedance. The 40V voltage rating limits suitability for higher voltage systems; consider alternatives like the MPS6724 series for higher voltage requirements. The TO-237 package offers limited thermal dissipation compared to larger packages, making it appropriate for low-to-medium power tasks rather than high-power industrial drives. Evaluate the required hFE range against the load drive requirements to ensure sufficient gain for the intended base current.

Single Bipolar Transistors Part Context

The 2N6724 belongs to the family of silicon NPN Darlington transistors, which combine two bipolar transistors to achieve high current gain. This topology simplifies driver circuit design by reducing the necessary base drive current. While the 2N6724 provides 1A capacity, related parts such as the 2N6284G offer significantly higher current ratings (20A) and power dissipation capabilities for more demanding heavy-duty applications. The component serves as a bridge between low-power logic signals and higher-power loads.

Single Bipolar Transistors Replacement Considerations

• MPS6724 (Higher voltage/current variants available)
• 2N6725 (Complementary PNP version)

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the 2N6724?

The maximum collector-emitter voltage (VCEO) is 40 V.

Is the 2N6724 a complementary pair?

No, the 2N6724 is a single NPN transistor. The complementary PNP version is designated as the 2N6725.