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The Microsemi Corporation 2N6762 is a military-qualified N-channel MOSFET designed for high-reliability applications. It features a TO-3 (TO-204AA) flange-mount package with the case connected to the drain. Key electrical parameters include a minimum drain-source breakdown voltage of 500 V, a maximum continuous drain current of 4.5 A, and a maximum on-resistance of 1.8 Ω. The device operates in enhancement mode with a built-in diode configuration and supports a maximum junction temperature of 150 °C.
Verify that the specific order suffix matches the required reliability grade, as commercial versions may differ from the qualified JAN, JANTX, or JANTXV levels. Confirm package integrity and radiation hardness requirements against the official datasheet specifications before procurement.
Select this component when a 500 V N-channel MOSFET with high reliability is required. Ensure the thermal management system supports the specified operating temperatures and that the TO-3 mounting style fits the mechanical constraints of the target assembly.
This part belongs to a family of switching transistors including the 2N6756, 2N6758, and 2N6760. All variants share similar military qualifications but offer different power ratings and switching speeds to suit various application needs within the same high-reliability ecosystem.
Direct substitutes include other members of the same qualified family, such as the 2N6760, provided their specific voltage and current ratings align with the circuit requirements.