2N6766

2N6766

  • Description:MOSFET N-CH 200V 30A TO3
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk

SKU:b48551d6cb6a Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N-CH 200V 30A TO3
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):200 V
  • Current - Continuous Drain (Id) @ 25°C:30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:90mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:115 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):4W (Ta), 150W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-3
  • Package / Case:TO-204AE

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2N6766

Overview

The JANTX2N6766 is an N-channel power MOSFET qualified per MIL-PRF-19500/543. It features a low-profile metal can design in the TO-254AA package. The device supports JAN, JANTX, and JANTXV qualification levels for high-reliability applications. Commercial RoHS-compliant versions are also available.

Feature Summary

  • Military qualification up to JANTXV level
  • Low-profile metal can construction
  • Voltage-controlled switching operation

Applications

  • Military systems requiring high reliability
  • High-reliability industrial applications
  • Switching transistor circuits

Procurement Notes

Verify the specific suffix (JAN, JANTX, or JANTXV) against the required military specification level. Confirm leaded package availability and check for commercial RoHS compliance if applicable. Ensure ordering requirements align with Microsemi's factory special order protocols.

Selection Notes

Select this component for applications demanding verified military-grade reliability and voltage-controlled switching. Consider the TO-254AA package constraints and thermal management needs. Evaluate alternative part numbers within the 2N6764 family if different voltage or current ratings are required.

Part Context

This device belongs to a family of N-channel MOSFETs including 2N6764, 2N6768, and 2N6770. These transistors are designed for high-reliability environments and offer various switching speed options. They are suitable for both through-hole and surface-mount implementations depending on the specific variant selected.

2N67662N6766

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