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Product Detailed Parameters
- Description：MOSFET N-CH 400V 14A TO3
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：400 V
- Current - Continuous Drain (Id) @ 25°C：14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：400mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：110 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：4W (Ta), 150W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3
- Package / Case：TO-204AE
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Overview
The Microsemi Corporation 2N6768 is an N-channel switching transistor qualified to the JANTXV level under MIL-PRF-19500/543. It features a low-profile metal can design suitable for high-reliability applications. The device operates in enhancement mode with a built-in diode configuration and utilizes silicon metal-oxide semiconductor technology.
Feature Summary
- Military qualification up to the JANTXV level for high-reliability environments
- Low-profile metal can package design
- Enhancement mode operation with integrated diode
Applications
- Military systems requiring high reliability
- High-reliability switching circuits
- Space-qualified electronic assemblies
Procurement Notes
Verify that the specific orderable part number includes the required qualification suffix (e.g., JANTXV) as generic 2N6768 identifiers may refer to commercial grades. Confirm lead times and availability directly with authorized distributors, as military-grade components often have restricted supply chains. Ensure compliance with export control regulations applicable to defense-related semiconductor products.
Selection Notes
Select this component when MIL-PRF-19500/543 qualification is mandatory. Compare against the broader 2N676x family (including 2N6764, 2N6766, and 2N6770) to ensure voltage and current ratings match the specific circuit requirements. Verify thermal management capabilities align with the low-profile metal can package constraints.
Part Context
The 2N6768 belongs to a family of N-channel MOSFETs including the 2N6764, 2N6766, and 2N6770. These devices are designed for high-reliability applications and are available in through-hole packages. The family offers various power ratings and switching speeds to meet diverse system needs within military and aerospace sectors.
Replacement Considerations
Direct substitutes include other members of the same MIL-PRF-19500/543 qualified family, such as the 2N6764, 2N6766, or 2N6770, provided their electrical parameters suit the application. Cross-manufacturer equivalents require careful verification of radiation hardness and qualification levels.
