2N6768T1

Description：MOSFET N-CH 400V 14A TO254AA
Series：-
Mfr：Microsemi Corporation
Package：Bulk

SKU:ce5dc10be443 Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 400V 14A TO254AA
Series：-
Mfr：Microsemi Corporation
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：400 V
Current - Continuous Drain (Id) @ 25°C：14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：400mOhm @ 14A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：110 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：4W (Ta), 150W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-254AA
Package / Case：TO-254-3, TO-254AA (Straight Leads)

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2N6768T1

Overview

The Microsemi Corporation 2N6768T1 is a hermetically sealed N-channel power MOSFET designed for high-power and high-speed applications. It features a 400V drain-to-source voltage rating and supports a continuous drain current of 14A. The device exhibits a maximum on-state resistance of 0.3 ohms at 10V gate drive. Packaged in the TO-204AA metal can, it is suitable for demanding environments requiring robust switching performance.

Feature Summary

Hermetically sealed construction for environmental reliability
HEXFET technology enabling low on-state resistance and high transconductance
Superior reverse energy handling and diode recovery dv/dt capability

Applications

Switching applications
Uninterruptible Power Supplies (UPS)
AC and DC motor controls
Relay drivers
High energy pulse circuits

Procurement Notes

Verify the specific suffix T1 to confirm tape-and-reel packaging if required by assembly equipment. Confirm RoHS compliance status as military variants often differ from commercial standards. Validate that the TO-204AA package dimensions match the target PCB footprint before finalizing procurement orders.

Selection Notes

Select this component when a ruggedized, hermetically sealed N-channel MOSFET with 400V blocking capability is necessary. Ensure the thermal management design accommodates the power dissipation limits inherent to the TO-204AA metal case. Verify that the 0.3 ohm Rds(on) meets the efficiency requirements of the specific load circuit.

Part Context

This part belongs to the 2N6768 family of power MOSFETs manufactured by Microsemi Corporation. It utilizes HEXFET technology to achieve efficient geometry and unique processing. The device is distinct from commercial equivalents due to its hermetic sealing and radiation-hardened characteristics typical of military-grade components.