2N6770T1

Description：MOSFET N-CH 500V 12A TO254AA
Series：-
Mfr：Microsemi Corporation
Package：Bulk

SKU:bf824e9e6de6 Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 500V 12A TO254AA
Series：-
Mfr：Microsemi Corporation
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：500mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：120 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：4W (Ta), 150W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-254AA
Package / Case：TO-254-3, TO-254AA (Straight Leads)

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2N6770T1

Overview

The 2N6770T1 is a high-voltage N-channel power MOSFET manufactured by Microsemi Corporation. It features a TO-254AA (TO-3) flange-mount package designed for robust thermal dissipation in industrial and military applications. The device operates with a drain-source voltage rating of 500V and supports a continuous drain current of 12A. Key electrical characteristics include a maximum on-resistance of 0.4 ohms at a gate drive of 10V, ensuring efficient conduction. The component is rated for a total power dissipation of 150W and functions reliably within an operating junction temperature range up to 150°C.

Feature Summary

High-voltage capability with a 500V drain-source breakdown voltage for demanding power switching environments
Robust mechanical construction utilizing a metal flange-mount TO-254AA package for superior heat transfer
Low on-resistance design to minimize conduction losses during high-current operation

Applications

High-voltage DC-DC converter circuits
Industrial motor control systems
Military-grade power supply regulation

Procurement Notes

Verify the specific suffix 'T1' against official Microsemi documentation to confirm it denotes the correct tape-and-reel or bulk packaging variant, as suffixes can indicate distinct handling or shipping configurations without altering electrical function. Ensure compliance with relevant export control classifications such as EAR99 if applicable to your jurisdiction. Cross-reference the manufacturer part number directly with the latest datasheet revision to validate pinout compatibility and absolute maximum ratings before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring high voltage isolation combined with moderate current handling capabilities. The TO-254AA package necessitates specific PCB mounting strategies involving direct chassis or heatsink attachment due to its flange-mount nature. Evaluate thermal management requirements carefully, as the 150W power dissipation rating depends heavily on the effectiveness of the external cooling solution. Confirm that the 10V gate drive requirement aligns with the available control logic levels in the target system architecture.

Part Context

This device belongs to the legacy Microsemi (formerly Microchip/RTX) discrete semiconductor portfolio, specifically categorized under high-power N-channel MOSFETs. These components are engineered for reliability in harsh environments, often serving in aerospace, defense, and heavy industrial sectors where standard commercial-grade packages cannot meet thermal or voltage stress requirements. The TO-254AA form factor represents a transition from traditional through-hole TO-3 cans to more modern surface-mount compatible flange designs.