2N6782

Description：MOSFET N-CH 100V 3.5A TO39
Series：-
Mfr：Microsemi Corporation
Package：Bulk

SKU:391dbbdfeb11 Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 3.5A TO39
Series：-
Mfr：Microsemi Corporation
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：600mOhm @ 2.25A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：800mW (Ta), 15W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-39
Package / Case：TO-205AF Metal Can

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2N6782

Overview

The 2N6782 is a single N-channel power MOSFET manufactured by Microsemi Corporation. It utilizes silicon technology and is housed in a TO-39 (TO-205AF) metal can package designed for through-hole mounting. The device supports a drain-source voltage of 100 V and a continuous drain current of 3.5 A at case temperature. Key electrical parameters include a maximum gate-source voltage of ±20 V, a threshold voltage of 4 V at 250 µA, and an on-resistance of 600 mΩ at 10 V. Power dissipation ratings are 800 mW at ambient temperature and 15 W at case temperature. The component operates within a junction temperature range of -55°C to 150°C.

Feature Summary

Hermetically sealed construction in a metal can package suitable for high-reliability environments
Military qualification compliant with MIL-PRF-19500/556 standards
Enhancement mode operation for efficient switching applications

Applications

High-reliability military switching circuits
Aviation and aerospace power management systems
Defense sector pulse and switching transistor applications

Procurement Notes

Verify the specific manufacturer source, as production has transferred from Microsemi to Microchip Technology following acquisition. Confirm RoHS compliance status, as official documentation indicates non-compliance. Check for active manufacturing or last-time buy notices due to potential limited supply availability for this legacy component.

Selection Notes

Select this component when hermetic sealing and radiation hardness are required for N-channel switching. Ensure the application fits the TO-39 form factor and thermal constraints. Compare against the 2N6784U and 2N6786U variants if higher voltage ratings are necessary for the specific circuit design requirements.

Part Context

This part belongs to a family of military-qualified N-channel MOSFETs including the 2N6784U and 2N6786U. Originally produced by Microsemi, these devices are now managed under Microchip Technology's portfolio. They are designed for harsh environments requiring high reliability and hermetic packaging standards typical of defense and aerospace electronics.