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Product Detailed Parameters
- Description：MOSFET N-CH 100V 3.5A 18ULCC
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：3.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 2.25A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta), 15W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：18-ULCC (9.14x7.49)
- Package / Case：18-CLCC
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Overview
The Microsemi 2N6782U is a military-qualified N-channel silicon MOSFET designed for high-reliability applications. It operates in enhancement mode within a hermetically sealed LCC-15 ceramic package. Key electrical parameters include a maximum drain current of 2.25 A, a minimum drain-source breakdown voltage of 200 V, and a maximum on-resistance of 1.725 ohms. The device features a single element configuration with a built-in diode and an avalanche energy rating of 20 mJ.
Feature Summary
- Military qualification compliant with MIL-PRF-19500/556 standards up to the JANTXV level
- Hermetically sealed ceramic metal-sealed cofired package ensuring environmental durability
- Integrated body diode structure for simplified circuit design
Applications
- High-reliability military switching circuits
- Aerospace power management systems
- Harsh environment electronic protection
Procurement Notes
Verify that the specific order includes the correct suffix indicating the required qualification level (JAN, JANTX, or JANTXV). Confirm package integrity upon receipt, as hermetic sealing is critical for the intended high-reliability applications. Ensure compatibility with MIL-PRF-19500/556 requirements for your specific system constraints.
Selection Notes
Select this component when military-grade reliability and radiation hardness are required. The 200 V breakdown voltage suits medium-voltage switching tasks. Compare against the 2N6784U and 2N6786U variants if different voltage or current ratings are needed. Verify that the LCC-15 footprint matches the PCB layout constraints.
Part Context
This part belongs to the 2N678xU family of N-channel MOSFETs manufactured by Microsemi. The family includes the 2N6782U, 2N6784U, and 2N6786U, all sharing similar packaging and basic construction but differing in specific electrical characteristics. These devices are distinct from commercial equivalents due to their rigorous qualification processes.
Replacement Considerations
Direct substitutes include other parts qualified under MIL-PRF-19500/556 with identical pinouts and electrical limits. Cross-reference with JAN, JANTX, or JANTXV versions of the 2N6782U depending on the required reliability tier. Verify thermal and mechanical compatibility before substitution.
