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Product Detailed Parameters
- Description：POWER FIELD-EFFECT TRANSISTOR, N
- Series：-
- Mfr：International Rectifier
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：20W
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-205AF (TO-39)
- Package / Case：TO-205AF Metal Can
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Overview
The International Rectifier 2N6787 is an N-channel power MOSFET housed in a TO-205AF (TO-39) through-hole package. It features a drain-to-source voltage rating of 80 V and supports a maximum continuous drain current of 6 A at case temperature. The device has a maximum power dissipation of 20 W and operates up to 150 °C junction temperature. It utilizes enhancement mode operation with tin/lead terminal plating.
Feature Summary
- N-channel metal-oxide semiconductor field-effect transistor architecture
- Through-hole mounting configuration for robust mechanical attachment
- Enhancement mode operation for standard switching control
Applications
- Fast switching circuits
- Motor controls
- Power supplies
Procurement Notes
Verify the manufacturer origin, as sources list both Thomson Consumer Electronics and International Rectifier. Confirm RoHS compliance status, as documentation indicates non-compliance due to lead content. Ensure the TO-205AF package matches your board layout requirements before ordering.
Selection Notes
Select this component for intermediate-voltage applications requiring 80 V blocking capability. The 6 A current rating suits moderate power loads. Consider the through-hole package constraint if surface mount alternatives are preferred. Verify thermal management needs for the 20 W dissipation limit.
Part Context
This part belongs to the family of single N-channel power MOSFETs designed for general-purpose switching. It shares functional similarities with other TO-39 packaged transistors but is distinct in its specific voltage and current ratings defined by the manufacturer's original specifications.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching the 80 V, 6 A, TO-205AF specifications from official datasheets.
