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Product Detailed Parameters
- Description：MOSFET N-CH 100V 8A TO39
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：180mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250mA
- Gate Charge (Qg) (Max) @ Vgs：6.34 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta), 25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-39
- Package / Case：TO-205AF Metal Can
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Overview
The Microsemi Corporation 2N6796 is a military-qualified N-channel enhancement-mode silicon power MOSFET. It operates with a drain-source voltage of 100 V and supports a continuous drain current of 8 A at case temperature. The device features a low on-resistance of 0.18 ohms and is available in hermetically sealed TO-205AF (TO-39) packages or surface-mount ULCC configurations. Qualification levels include JAN, JANTX, and JANTXV per MIL-PRF-19500/557.
Feature Summary
- Military-grade reliability qualification for high-reliability applications
- Low on-resistance for efficient power switching
- Flexible mounting options via top-hat design or surface mount
Applications
- Military electronic systems
- High-reliability power switching circuits
- Aerospace equipment requiring radiation-hardened components
Procurement Notes
Verify the specific suffix to confirm the package type and qualification level, as these determine physical dimensions and performance ratings. Confirm RoHS compliance status if required, noting that commercial versions may differ from military specifications. Ensure the ordering information matches the exact MIL-PRF-19500/557 requirements for your application.
Selection Notes
Select this component when a ruggedized N-channel MOSFET is needed for harsh environments. Consider the thermal management capabilities associated with the TO-205AF or ULCC packages. Evaluate the trade-off between the 100 V rating and the 8 A current capacity against circuit demands.
Part Context
This part belongs to a family of switching transistors including the 2N6798, 2N6800, and 2N6802. These devices share similar structural characteristics but vary in voltage and current ratings. The 2N6796 specifically targets applications requiring moderate voltage handling with high current capability in a compact form factor.
Replacement Considerations
Equivalent parts include the JANTXV2N6796E3 and other variants within the 2N679x series. Verify pinout compatibility and electrical parameters before substitution.
