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Product Detailed Parameters
- Description：MOSFET N-CH 500V 2.5A TO39
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.46 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta), 25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-39 (TO-205AD)
- Package / Case：TO-205AD, TO-39-3 Metal Can
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Overview
The Microsemi Corporation 2N6802 is a military-grade N-channel silicon power MOSFET designed for high-reliability applications. It features a drain-source voltage rating of 500V and a continuous drain current capacity of 3A at case temperature. The device utilizes a TO-205AF metal can package, ensuring robust thermal performance with a maximum power dissipation of 1W at ambient conditions and 25W at the case. Key electrical characteristics include a gate threshold voltage of up to 4V at 250µA and a maximum on-resistance of 1 ohm when driven at 10V. It operates within a junction temperature range of -55°C to 150°C and complies with MIL-PRF-19500/557 standards.
Feature Summary
- Military-grade construction compliant with MIL-PRF-19500/557 specifications
- High-voltage capability with 500V drain-source breakdown
- Robust thermal management via metal TO-205AF package
- Enhanced mode operation with low gate threshold voltage
Applications
- Radiation-hardened aerospace systems
- Military power switching circuits
- High-voltage DC-DC converters
- Avionics power distribution units
Procurement Notes
Verify the specific suffix (e.g., U, 98U) against the required datasheet revision, as these denote manufacturing lot or date codes rather than functional changes. Confirm radiation hardening requirements if applicable to the mission profile. Note that this component may be subject to export controls due to its military classification. Ensure the procurement source provides traceability documentation consistent with defense industry standards.
Selection Notes
Select this component for designs requiring proven radiation tolerance and high voltage isolation in a hermetic package. Compare the 1 ohm on-resistance against system conduction loss limits at the target drive voltage. Evaluate the thermal resistance of the TO-205AF lead frame against the available heatsinking area. Consider the 4V gate threshold when designing driver circuits to ensure reliable turn-on under varying temperature conditions.
Part Context
The 2N6802 belongs to the legacy Microsemi (formerly Microchip/Littelfuse) discrete semiconductor portfolio, specifically categorized under radiation-hardened power transistors. It serves as a direct replacement for older Mil-Spec equivalents in established avionics and satellite platforms. The device represents a mature technology node optimized for reliability rather than miniaturization, distinguishing it from modern surface-mount alternatives.
Replacement Considerations
Direct cross-reference candidates include the JANTXV2N6802U and JANTXV2N6800 variants, provided pinout compatibility and exact parameter tolerances are verified. Substitutions must maintain the TO-205AF footprint and hermetic seal requirement. Verify that any alternative meets the same MIL-PRF-19500/557 qualification level.
