2N696 TIN/LEAD

Single Bipolar Transistors Overview

The 2N696 is a silicon NPN epitaxial planar transistor manufactured by Central Semiconductor Corp. It is housed in a TO-5 metal can package and designed for general-purpose switching and amplification applications. The device features a collector-emitter breakdown voltage of 40V, a collector current rating of 1A, and a power dissipation capacity of 800mW at 25°C ambient temperature. Key electrical characteristics include a DC current gain (hFE) ranging from 70 to 350 under specified test conditions, a collector-base breakdown voltage of 60V, and an emitter-base breakdown voltage of 7V. The transition frequency is rated at 200MHz, supporting high-speed operation within its thermal limits.

Single Bipolar Transistors Feature Summary

• Epitaxial planar construction utilizing silicon technology for reliable performance
• Metal can packaging providing robust mechanical protection and thermal stability
• High current gain capability suitable for amplifier stages
• Designed for general-purpose switching and linear amplification tasks

Single Bipolar Transistors Applications

• General-purpose low-frequency amplification circuits
• Electronic switching applications requiring moderate current handling
• Pulse generation and timing circuits
• Driver stages in audio or signal processing equipment

Single Bipolar Transistors Procurement Notes

Verify the specific plating suffix TIN/LEAD with the manufacturer or authorized distributor prior to ordering, as lead-free alternatives may exist. Confirm that the TO-5 metal can package meets your board layout requirements. Request the latest datasheet to validate electrical parameters against your design specifications. Ensure compliance with RoHS regulations if applicable to your final product assembly process.

Single Bipolar Transistors Selection Notes

Select this component when a rugged metal can package is required for harsh environments. Consider the 40V collector-emitter voltage and 1A current limits to ensure adequate headroom for your circuit loads. Evaluate the hFE range of 70 to 350 to determine if binning is necessary for consistent gain performance. Compare the 800mW power dissipation against your thermal management capabilities to prevent overheating during continuous operation.

Single Bipolar Transistors Part Context

The 2N696 belongs to the family of standard NPN bipolar junction transistors produced by Central Semiconductor Corp. It shares the TO-5 metal can form factor common to many legacy and industrial-grade discrete semiconductors. This packaging style offers superior heat dissipation compared to plastic equivalents like TO-92. The device serves as a versatile solution for designs prioritizing durability and established reliability over miniaturization.

Single Bipolar Transistors Replacement Considerations

• 2N2222
• 2N3904
• 2N3906

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the 2N696?

The maximum collector-emitter breakdown voltage (VCEO) is 40V.

Does the 2N696 come in a plastic package?

No, the standard 2N696 is housed in a TO-5 metal can package.

What is the typical DC current gain range?

The DC current gain (hFE) typically ranges from 70 to 350 depending on the specific test conditions and binning.