2N697A PBFREE

Single Bipolar Transistors Overview

The 2N697A PBFREE is an NPN medium power bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes a through-hole mounting style and is housed in a bulk package. Key electrical specifications include a maximum DC collector current of 500 mA, a collector-emitter breakdown voltage (VCEO) of 35 V, and a collector-base voltage (VCBO) of 60 V. The device features an emitter-base voltage (VEBO) of 5 V, a collector-emitter saturation voltage of 1.5 V, and a power dissipation rating of 600 mW. Its gain-bandwidth product (fT) is 50 MHz, with an operating temperature range spanning from -65°C to +150°C.

Single Bipolar Transistors Feature Summary

• NPN medium power configuration suitable for general-purpose amplification and switching tasks
• Robust thermal performance supporting operation up to +150°C junction temperature
• Through-hole construction designed for reliable mechanical attachment on printed circuit boards

Single Bipolar Transistors Applications

• General-purpose signal amplification circuits
• Low-power switching applications
• Audio pre-amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet version and RoHS compliance status directly with Central Semiconductor or authorized distributors before finalizing procurement. Confirm that the bulk packaging format aligns with your assembly requirements. Ensure that the 500 mA current rating and 600 mW power dissipation limits are sufficient for your intended thermal management strategy. Cross-reference the pinout configuration with your schematic design to prevent installation errors during production.

Single Bipolar Transistors Selection Notes

Select this component when a medium power NPN BJT with a 35 V collector-emitter voltage rating is required for through-hole assemblies. The 500 mA continuous current capability supports moderate load driving needs. Consider the 50 MHz transition frequency for applications requiring standard audio or low-frequency signal processing. Evaluate the 600 mW power dissipation against your expected heat generation to determine if additional thermal sinking is necessary for long-term reliability.

Single Bipolar Transistors Part Context

This part belongs to the discrete semiconductor category, specifically within the single bipolar junction transistor segment. Central Semiconductor Corp produces this device as a lead-free variant, adhering to environmental standards. The 2N697A designation identifies it as a standardized NPN transistor model, distinct from other series such as the 2N4401 or 2N2222A found in the manufacturer's portfolio. It serves as a fundamental active component for analog and digital circuit designs.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.