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The Microchip Technology 2N6989 is a dual-bipolar junction transistor (BJT) array configured as four NPN transistors in a single package. It features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 800mA. The device supports through-hole mounting in a TO-116 (14-DIP) package with a total power dissipation capacity of 1.5W. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 150mA and 10V, a maximum collector cutoff current of 10µA, and a saturation voltage of 1V at 50mA base and 500mA collector currents. The operating junction temperature range extends from -65°C to 200°C.
Verify component authenticity through authorized Microchip distributors or certified suppliers. Confirm the specific manufacturing lot date code against project requirements, as this part may have limited availability due to its status in certain distribution channels. Ensure that the TO-116 package dimensions match the target PCB footprint before finalizing procurement orders.
Select the 2N6989 when a compact solution for four matched NPN transistors is required in through-hole designs. Consider the 50V voltage rating and 800mA current limit against load requirements. Evaluate the 1.5W power dissipation constraint relative to ambient temperature conditions. Compare against alternative quad arrays if surface-mount packaging is preferred for automated assembly processes.
The 2N6989 belongs to the 2N698 series of silicon NPN switching transistors manufactured by Microchip Technology. This series includes related variants such as the 2N6987 and 2N6988, which offer different pin configurations or electrical specifications within the same family. The component is designed for military-grade reliability standards, often associated with MIL-PRF-19500 qualifications in similar package types.
Direct replacements include other quad NPN arrays in TO-116 packages such as the 2N6987 or 2N6988, provided pin compatibility and electrical ratings meet circuit requirements. Verify that substitute components maintain the same hFE ranges and saturation voltages to ensure signal integrity.