2N7000-D74Z

$0.48

Description：MOSFET N-CH 60V 200MA TO92-3
Series：-
Mfr：onsemi
Package：Cut Tape (CT),Tape & Box (TB)

SKU:5f4e893290e3 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 200MA TO92-3
Series：-
Mfr：onsemi
Package：Cut Tape (CT),Tape & Box (TB)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：400mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-92-3
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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2N7000-D74Z

Overview

The onsemi 2N7000-D74Z is an N-channel enhancement mode field effect transistor manufactured using high cell density DMOS technology. It features a TO-92 package with three leads and operates within a drain-source voltage range of 60 V. The device supports a maximum continuous drain current of 200 mA and a maximum power dissipation of 400 mW at 25°C. Key electrical parameters include a gate threshold voltage between 0.8 V and 3 V, and a static drain-source on-resistance of up to 5 Ω at 10 V gate drive. The component is designed for low-voltage, low-current switching applications.

Feature Summary

High density cell design minimizes on-state resistance while ensuring rugged performance
Voltage controlled small signal switch suitable for logic level driving
ESD protection exceeding 100 V HBM and 2 kV CDM standards
Lead-free and halogen-free construction

Applications

Small servo motor control
Power MOSFET gate drivers
General purpose switching applications

Procurement Notes

Verify the specific D74Z suffix indicates Ammo packing when ordering from distributors. Confirm that the TO-92 package matches the required mechanical footprint for the target PCB layout. Ensure the application environment remains within the specified -55°C to 150°C operating temperature range to maintain reliability.

Selection Notes

Select this component for low-power switching tasks requiring direct microcontroller interface due to its logic-level gate threshold. Consider the thermal resistance characteristics if operating near the maximum power dissipation limit. Verify that the 200 mA continuous current rating meets the load requirements without exceeding safe operating area limits during pulsed conditions.

Part Context

This part belongs to the 2N7000 series of N-channel enhancement mode FETs produced by onsemi. It utilizes proprietary DMOS technology to achieve low on-resistance. The device is widely used in consumer electronics and industrial control circuits where small signal switching is required. It serves as a standard replacement for legacy discrete transistors in modern designs.