2N7000-G

$0.43

Description：MOSFET N-CH 60V 200MA TO92-3
Series：-
Mfr：Microchip Technology
Package：Bag

SKU:6cb9f4bf1b04 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 200MA TO92-3
Series：-
Mfr：Microchip Technology
Package：Bag
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：200mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：60 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-92-3
Package / Case：TO-226-3, TO-92-3 (TO-226AA)

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2N7000-G

Overview

The Microchip Technology 2N7000-G is an N-Channel Enhancement-Mode Vertical DMOS FET housed in a 3-lead TO-92 through-hole package. It features a Drain-to-Source Voltage (BVDSS) of 60 V and a maximum Gate-to-Source Voltage of ±30 V. The device provides a continuous On-State Drain Current (ID(ON)) of 75 mA at VGS = 4.5 V, with a peak pulsed current capability of 500 mA. Static Drain-to-Source On-State Resistance (RDS(ON)) is specified at a maximum of 5 Ω at VGS = 10 V. The Gate Threshold Voltage (VGS(th)) ranges from 0.8 V to 3 V. Operating ambient temperature spans from -55°C to +150°C.

Feature Summary

Free from secondary breakdown due to positive temperature coefficient inherent in MOS structures
Low power drive requirement suitable for direct logic interface
Integral source-drain diode included within the vertical DMOS structure
High input impedance and fast switching speeds enabled by low input capacitance

Applications

Motor controls
Converters
Amplifiers
Switches
Drivers for relays, solenoids, lamps, and displays

Procurement Notes

Verify that the ordering suffix '-G' corresponds to the lead-free/RoHS-compliant variant as defined in the product identification system. Confirm the media type matches the required packaging quantity, typically 1000 per bag for this specific part number configuration. Ensure the component meets the environmental specifications required for the target operating temperature range.

Selection Notes

Select this component when a normally-off N-channel switch is required with high input impedance and robust thermal stability. The vertical DMOS technology ensures freedom from thermal runaway. Consider the 5 ohm on-state resistance and 75 mA continuous current limit when designing load circuits. Verify that the gate threshold voltage aligns with the available control logic voltage levels.

Part Context

This device utilizes a well-proven silicon gate manufacturing process combined with a vertical DMOS structure. This architecture delivers power handling capabilities comparable to bipolar transistors while maintaining the high input impedance characteristic of MOS devices. The design is optimized for applications requiring very low threshold voltage, high breakdown voltage, and fast switching speeds.

Replacement Considerations

Cross-reference with other manufacturers offering the standard 2N7000 specification in a TO-92 package. Verify pinout compatibility and ensure electrical parameters such as RDS(ON), BVDSS, and VGS(th) meet or exceed the requirements of the original design.