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Product Detailed Parameters
- Description：MOSFET N-CH 60V 300MA TO92-3
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tape & Box (TB)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：300mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：40 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：830mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-92-3
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
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Overview
The NXP USA Inc. 2N7000,126 is an N-channel enhancement mode field-effect transistor manufactured using TrenchMOS™ technology and housed in a SOT54 (TO-92 variant) plastic package. It features a maximum drain-source voltage of 60 V and a continuous drain current rating of 300 mA at 25 °C. The device exhibits low on-state resistance, specified as a maximum of 5 Ω at VGS = 10 V and 5.3 Ω at VGS = 4.5 V. Total power dissipation is rated at 0.83 W under standard ambient conditions.
Feature Summary
- Utilizes TrenchMOS™ technology for high-density performance
- Provides very fast switching capabilities
- Compatible with logic level inputs
Applications
- Relay driver
- High speed line driver
- Logic level translator
Procurement Notes
Verify the specific manufacturer origin, as the datasheet references Philips Semiconductors while the brand is listed as NXP USA Inc. Confirm the package designation matches the SOT54 outline. Ensure the component meets the required thermal resistance and junction temperature limits for the intended operating environment before finalizing procurement.
Selection Notes
Select this component for applications requiring small-signal switching with logic-level compatibility. Consider the 60 V breakdown voltage and 300 mA current limit when designing circuits. Evaluate the thermal characteristics, specifically the 150 K/W junction-to-ambient resistance, to ensure adequate heat dissipation within the TO-92 package constraints.
Part Context
This part belongs to the 2N7000 series of N-channel MOSFETs. The '126' suffix typically denotes a specific tape and reel packaging configuration or manufacturing lot code, though the datasheet primarily identifies the physical package as SOT54 (TO-92). The device represents a transition from older planar DMOS processes to the more efficient TrenchMOS™ architecture.
Replacement Considerations
Cross-reference with other 2N7000 variants from different manufacturers to verify pinout compatibility and electrical parameter alignment, particularly regarding RDS(on) thresholds and gate threshold voltages.
