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Product Detailed Parameters
- Description：MOSFET N-CH 60V 200MA TO92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：60 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-92 (TO-226)
- Package / Case：TO-226-3, TO-92-3 Long Body
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Overview
The onsemi 2N7000G is a small signal N-channel enhancement mode MOSFET designed for general-purpose switching applications. It features a maximum drain-source voltage of 60 V and a continuous drain current of 200 mA. The device utilizes planar DMOS technology to achieve low power drive requirements and high input impedance. Packaged in a TO-92 through-hole configuration, it offers a typical gate charge of 0.8 nC and a maximum on-resistance of 5 Ω. The component operates within a temperature range of -55°C to +150°C with a power dissipation rating of 400 mW.
Feature Summary
- Planar DMOS technology ensures excellent thermal stability and reliability.
- Low power drive requirements facilitate direct logic interface compatibility.
- Integrated source-drain diode provides protection against inductive load transients.
Applications
- Battery switch circuits
- Load switch implementations
- Motor controller interfaces
Procurement Notes
Verify the specific datasheet revision and ordering suffix when sourcing. Confirm that the TO-92 package variant matches the required pinout and mechanical dimensions for the target PCB layout. Ensure compliance with RoHS directives if applicable to the manufacturing region. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components.
Selection Notes
Select this component for low-current switching tasks where through-hole mounting is preferred over surface mount alternatives. Consider the 5 Ω on-resistance when calculating conduction losses at higher currents. Evaluate the 200 mA continuous current limit against peak load requirements. Verify that the 60 V breakdown voltage exceeds the maximum circuit voltage with adequate safety margin.
Part Context
This device belongs to the widely used 2N7000 series of small signal MOSFETs. It serves as a standard replacement for legacy silicon-based N-channel transistors in educational and industrial designs. The TO-92 package allows for easy prototyping and manual assembly. It is commonly found in consumer electronics and control boards requiring simple low-power switching functions.
Replacement Considerations
Direct substitutes include the 2N7000 from other manufacturers such as Vishay or Microchip. Verify pinout compatibility and electrical parameter equivalence before substitution. Surface-mount equivalents like the 2N7002 require PCB redesign due to different packaging.
