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Product Detailed Parameters
- Description：MOSFET N-CH 60V 200MA TO92-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：60 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-92 (TO-226)
- Package / Case：TO-226-3, TO-92-3 Long Body, Formed Leads
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Overview
The onsemi 2N7000RLRAG is a single N-channel enhancement mode MOSFET designed for small-signal switching applications. It utilizes planar DMOS technology to achieve low on-resistance and fast switching speeds. The device features a maximum drain-source voltage of 60 V and a continuous drain current of 200 mA. It is housed in a TO-92-3 through-hole package, suitable for general-purpose logic-level control and battery switch circuits.
Feature Summary
- Planar DMOS technology ensures low on-resistance and high-speed switching performance.
- Logic-level gate drive capability allows direct interfacing with standard digital logic outputs.
- Robust thermal design supports operation up to a maximum junction temperature of 150°C.
Applications
- Battery management system switches
- General-purpose load switching
- Logic level translation circuits
Procurement Notes
Verify the specific suffix RLRAG against the manufacturer's official datasheet to confirm it denotes the correct tape-and-reel packaging variant. Ensure the component matches the required TO-92-3 form factor and that the source documentation explicitly lists this part number as an active or qualified product within the onsemi portfolio.
Selection Notes
Select this component when a through-hole N-channel MOSFET with 60V breakdown is required for low-current switching tasks. The TO-92-3 package facilitates easy prototyping and manual assembly. Verify that the 200mA current rating and 5Ω on-resistance meet the specific circuit load requirements before finalizing the design.
Part Context
This component belongs to the widely used 2N7000 series of small-signal MOSFETs. It serves as a fundamental discrete semiconductor device for controlling power loads in consumer electronics and industrial control systems. The part represents a standard industry specification for low-power switching applications requiring reliable N-channel performance.
Replacement Considerations
Direct substitutes include other manufacturers' 2N7000 variants such as the 2N7000LTA or generic equivalents from suppliers like Diotec Semiconductor, provided they maintain identical pinout, voltage ratings, and package dimensions.
