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Product Detailed Parameters
- Description：MOSFET N-CH 60V 200MA TO92-3
- Series：-
- Mfr：onsemi
- Package：Cut Tape (CT),Tape & Box (TB)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：400mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-92-3
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
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Overview
The onsemi 2N7000TA is an N-channel enhancement mode field effect transistor manufactured using high cell density DMOS technology. It features a TO-92 package with three leads (Source, Gate, Drain). Key electrical parameters include a drain-source voltage of 60 V, continuous drain current of 200 mA, and maximum power dissipation of 400 mW. The static drain-source on-resistance is typically 1.2 Ohms at VGS=10V and ID=500mA. The gate threshold voltage ranges from 0.8V to 3V. Operating temperature spans -55°C to +150°C.
Feature Summary
- High density cell design for low on-state resistance
- Voltage controlled small signal switch
- Rugged and reliable performance
- ESD protection level: HBM > 100 V, CDM > 2 kV
Applications
- Small servo motor control
- Power MOSFET gate drivers
- Other switching applications
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging type and quantity. The 'TA' designation requires cross-referencing with the manufacturer's current ordering guide to ensure alignment with bulk or tape-and-reel specifications. Confirm RoHS compliance status directly from the datasheet as manufacturing processes may evolve.
Selection Notes
Select this component for low-voltage, low-current applications requiring fast switching. Ensure the circuit operates within the 60V drain-source voltage limit and 200mA continuous current rating. Consider thermal derating above 25°C due to the 400mW power dissipation limit. Verify gate drive voltage compatibility with the specified threshold range.
Part Context
The 2N7000 belongs to a family of N-channel enhancement mode FETs produced by onsemi. It shares design characteristics with the 2N7002 and NDS7002A but differs in package and current capabilities. The device utilizes proprietary DMOS technology to minimize on-resistance while maintaining robust switching performance suitable for general-purpose small signal applications.
Replacement Considerations
Public confirmed substitute part numbers include 2N7002 and NDS7002A. Verify pinout configurations as SOT-23 packages may differ from TO-92 layouts. Check current ratings and package thermal characteristics before substitution.
