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Product Detailed Parameters
- Description：DIODE
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.23 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：370mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The 2N7002-13-F is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60V and a continuous drain current ranging from 105mA to 210mA depending on ambient temperature. The device offers low on-state resistance, with typical values of 5Ω at VGS=10V and 7.5Ω at VGS=5V. Packaged in a compact SOT23 surface-mount format, it supports a total power dissipation up to 540mW and operates within a temperature range of -55°C to +150°C.
Feature Summary
- Low on-resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free green device
Applications
- Motor controls
- Power-management functions
Procurement Notes
Verify the specific ordering suffix '-13-F' corresponds to the standard SOT23 package with a tape and reel quantity of 10,000 units. Confirm that the component meets the required environmental standards, specifically ensuring compliance with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3). Ensure the supplier provides documentation confirming the halogen and antimony-free status as defined by the manufacturer.
Selection Notes
Select this component for applications requiring small signal switching with minimal on-state resistance. Consider the thermal derating curves when designing for higher ambient temperatures, as the continuous drain current decreases significantly above 25°C. Verify that the gate threshold voltage range aligns with the logic levels of the driving circuitry to ensure reliable turn-on characteristics under varying load conditions.
Part Context
This part belongs to the 2N7002 family of N-channel enhancement mode MOSFETs designed for low-voltage, small-current applications. The '-13-F' suffix indicates a specific packaging configuration provided by Diodes Incorporated, distinguishing it from other variants like the '-7-F'. The device utilizes vertical DMOS technology to achieve superior switching performance while maintaining a compact physical footprint suitable for dense circuit board layouts.
Replacement Considerations
Cross-reference with equivalent N-channel MOSFETs offering similar 60V breakdown voltage and comparable RDS(ON) specifications. Ensure any substitute maintains the same SOT23 pinout and thermal characteristics. Verify that alternative components meet the same RoHS and halogen-free requirements if environmental compliance is mandatory for the final assembly.
