2N7002

$0.09

Description：60V 115MA 7.5@10V,500MA 225MW N
Series：-
Mfr：Shenzhen Slkormicro Semicon Co., Ltd.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:657cb3cd9be0 Category: Single FETs, MOSFETs Brand: Shenzhen Slkormicro Semicon Co., Ltd.

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Product introduction

Product Detailed Parameters

Description：60V 115MA 7.5@10V,500MA 225MW N
Series：-
Mfr：Shenzhen Slkormicro Semicon Co., Ltd.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：115mA
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：225mW
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002

Overview

The 2N7002 is an N-channel enhancement-mode MOSFET manufactured by Shenzhen Slkormicro Semicon Co., Ltd. It features a maximum drain-source voltage of 60V and a continuous drain current of 115mA at 25°C, with a pulsed current capability of 800mA. The device operates within a junction temperature range of -55°C to +150°C and dissipates up to 225mW of power. Key electrical characteristics include a gate threshold voltage of 1.0V to 2.5V and a static drain-source on-state resistance of 7.5Ω at VGS=5V. Packaged in a surface-mount SOT-23 format, it provides efficient switching for low-power applications.

Feature Summary

High power and current handling capability suitable for demanding small-signal applications
Lead-free product construction compliant with environmental standards
Surface mount package design optimized for space-saving integration

Applications

Battery protection circuits
Load switch implementations
Power management systems

Procurement Notes

Verify the manufacturer designation matches Shenzhen Slkormicro Semicon Co., Ltd. when sourcing this component. Confirm that the specific batch corresponds to the SOT-23 package dimensions provided in the datasheet. Ensure compliance with lead-free requirements if your assembly process mandates it. Cross-reference the part number against official distributor catalogs to confirm availability and authenticity before finalizing procurement orders.

Selection Notes

Select this component for designs requiring a compact N-channel switch with a 60V breakdown rating. The 115mA continuous current limit defines its suitability for low-power signal routing rather than high-current power delivery. Consider the 7.5Ω on-resistance when calculating conduction losses in battery protection or load switch topologies. The SOT-23 footprint facilitates easy integration into dense printed circuit board layouts.

Part Context

This component belongs to the category of N-channel enhancement-mode field-effect transistors designed for general-purpose switching. It utilizes silicon technology to achieve reliable performance in small-signal environments. The device serves as a fundamental building block for controlling electrical loads in portable electronics and industrial control modules where minimal physical footprint is required.