2N7002

$0.10

Description：MOSFET N-CH 60V 280MA SOT23-3
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:657cb3cd9be0 Category: Single FETs, MOSFETs Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 280MA SOT23-3
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：350mW (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3 (TO-236)
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002

Overview

The Diotec Semiconductor 2N7002 is an N-Channel Enhancement Mode Field Effect Transistor (FET) housed in a SOT-23 surface-mount package. It features a maximum Drain-Source voltage (VDS) of 60 V and a continuous DC Drain current (ID) of 115 mA. The device has a maximum power dissipation (Ptot) of 225 mW and operates within a junction temperature range up to +150°C. Key electrical characteristics include a Gate-Source threshold voltage (VGS(th)) ranging from 1 V to 2.5 V, and a maximum Drain-Source on-state resistance (RDS(on)) of 5 Ω at VGS = 10 V and ID = 500 mA. Input capacitance is typically 50 pF.

Feature Summary

Low on-state resistance for efficient switching
Fast switching times suitable for signal processing
Compliant with RoHS standards without exemptions

Applications

Signal processing circuits
Driver stages
Logic level converters

Procurement Notes

Verify the specific ordering suffix when procuring. The standard version is commercial/industrial grade. Versions with the -Q suffix are AEC-Q101 compliant, while the -AQ suffix indicates AEC-Q101 qualification. Confirm that the required automotive or industrial grade matches the project specifications before finalizing orders.

Selection Notes

Select this component for low-voltage switching applications requiring compact SOT-23 packaging. Ensure the design accounts for the 225 mW power dissipation limit and the 5 Ω RDS(on) maximum at specified test conditions. Verify thermal management requirements against the typical thermal resistance of 556 K/W for ambient mounting scenarios.

Part Context

This part belongs to the Diotec Semiconductor FET product family. It serves as a general-purpose N-Channel MOSFET designed for commercial and industrial environments. The device provides a cost-effective solution for small-signal switching tasks where space efficiency and standard reliability levels are prioritized over high-power handling capabilities.