2N7002

$0.41

Description：MOSFET SOT23 N 60V 5OHM 150C
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:657cb3cd9be0 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET SOT23 N 60V 5OHM 150C
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：200mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002

Overview

The onsemi 2N7002 is an N-channel enhancement mode field effect transistor manufactured using high cell density DMOS technology. It provides rugged, reliable, and fast switching performance with minimized on-state resistance. The device features a SOT-23 surface mount package with three pins. Key electrical parameters include a drain-source voltage of 60 V, a continuous drain current of 115 mA, and a maximum power dissipation of 200 mW. The gate threshold voltage ranges from 1 V to 2.5 V at 250 µA, while the static drain-source on-resistance is specified up to 7.5 Ω at 500 mA and 10 V.

Feature Summary

High density cell design for low RDS(on)
Voltage controlled small signal switch
Rugged and reliable operation
High saturation current capability

Applications

Small servo motor control
Power MOSFET gate drivers
General switching applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact package type and packing method. Confirm that the component meets Pb-Free and Halogen Free requirements as stated in the datasheet. Ensure the selected variant matches the required thermal characteristics and absolute maximum ratings for the intended operating environment.

Selection Notes

Select this component for low-voltage, low-current applications requiring efficient switching. Consider the thermal resistance and power dissipation limits when designing heat management solutions. Verify compatibility with the driving circuit's voltage levels relative to the gate threshold specifications. Evaluate the package constraints to ensure it fits the available PCB space.

Part Context

This part belongs to the 2N7002 series of N-channel enhancement mode field effect transistors produced by onsemi. It utilizes proprietary DMOS technology to achieve high performance in a compact form factor. The series includes variants such as the 2N7000 and NDS7002A, which share similar operational principles but differ in specific packaging and current handling capabilities.