2N7002-7-F-79

2N7002-7-F-79

  • Description:MOSFET N-CH 60V SOT23-3
  • Series:*
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:a2dc0f5de646 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N-CH 60V SOT23-3
  • Series:*
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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2N7002-7-F-79

Overview

The Diodes Incorporated 2N7002-7-F is a single N-channel enhancement mode MOSFET housed in a surface-mount SOT-23 package. It features a maximum drain-source voltage of 60V and a continuous drain current of 115mA at 25°C. The device has a maximum on-resistance of 13.5Ω and operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 300mW.

Feature Summary

  • Single N-channel enhancement mode field effect transistor
  • SOT-23 surface mount packaging for compact integration
  • High thermal stability across extended operating temperatures

Applications

  • General purpose switching circuits
  • Level shifting applications
  • Motor control interfaces

Procurement Notes

Verify the specific suffix against manufacturer documentation to confirm exact electrical tolerances and marking codes. Ensure the component meets required automotive or industrial standards if applicable. Confirm RoHS compliance status through official datasheets before finalizing procurement specifications.

Selection Notes

Select this component for low-power switching tasks requiring small form factors. Evaluate the 13.5Ω on-resistance against circuit load requirements to manage heat dissipation effectively. Consider the 60V breakdown voltage when designing for higher voltage environments.

Part Context

This part belongs to the widely used 2N7002 series of N-channel MOSFETs. It serves as a standard discrete semiconductor solution for logic-level driving and signal switching. The SOT-23 package allows for automated assembly in space-constrained electronic designs.

Replacement Considerations

Compatible substitutes include the 2N7002DWQ-7-F for dual-channel configurations and generic 2N7002 variants from other manufacturers. Verify pinout compatibility and electrical parameter alignment during substitution.

2N7002-7-F-792N7002-7-F-79

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