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The Diodes Incorporated 2N7002-7-F is a single N-channel enhancement mode MOSFET housed in a surface-mount SOT-23 package. It features a maximum drain-source voltage of 60V and a continuous drain current of 115mA at 25°C. The device has a maximum on-resistance of 13.5Ω and operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 300mW.
Verify the specific suffix against manufacturer documentation to confirm exact electrical tolerances and marking codes. Ensure the component meets required automotive or industrial standards if applicable. Confirm RoHS compliance status through official datasheets before finalizing procurement specifications.
Select this component for low-power switching tasks requiring small form factors. Evaluate the 13.5Ω on-resistance against circuit load requirements to manage heat dissipation effectively. Consider the 60V breakdown voltage when designing for higher voltage environments.
This part belongs to the widely used 2N7002 series of N-channel MOSFETs. It serves as a standard discrete semiconductor solution for logic-level driving and signal switching. The SOT-23 package allows for automated assembly in space-constrained electronic designs.
Compatible substitutes include the 2N7002DWQ-7-F for dual-channel configurations and generic 2N7002 variants from other manufacturers. Verify pinout compatibility and electrical parameter alignment during substitution.