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Product Detailed Parameters
- Description：MOSFET N-CH 60V 115MA SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：370mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The Diodes Incorporated 2N7002-7-F is an N-channel enhancement mode MOSFET housed in a SOT-23 surface-mount package. It features a maximum drain-source voltage of 60V and a continuous drain current of 210mA at +25°C. The device exhibits a low on-state resistance of 7.5Ω max at VGS=5V, with a gate threshold voltage ranging from 1.0V to 2.5V. Total power dissipation reaches 540mW on high-coverage PCBs, operating within a temperature range of -55°C to +150°C.
Feature Summary
- Low on-resistance for high efficiency
- Fast switching speed
- Low input capacitance
- Low gate threshold voltage
Applications
- Motor control
- Power management functions
Procurement Notes
Verify the specific ordering suffix '-7-F' corresponds to the standard 3,000-unit tape and reel packaging configuration. Confirm compliance with AEC-Q101 standards if automotive-grade reliability is required. Ensure the requested component matches the exact manufacturer part number to avoid discrepancies in electrical characteristics or physical dimensions.
Selection Notes
Select this component for applications requiring small surface mount packages with superior switching performance. Evaluate thermal constraints carefully, as power dissipation varies significantly based on PCB copper coverage. Consider the low gate threshold voltage for compatibility with logic-level drivers while ensuring adequate noise margins are maintained during operation.
Part Context
This component belongs to the 2N7002 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes vertical DMOS technology to minimize on-state resistance while maintaining fast switching capabilities. The device is designed for general-purpose switching and amplification tasks in compact electronic circuits.
Replacement Considerations
The 2N7002Q-7-F variant offers automotive qualification under AEC-Q101 standards. Other manufacturers produce equivalent N-channel MOSFETs in SOT-23 packages; verify pinout compatibility and ensure electrical parameters meet or exceed the original specifications before substitution.
