SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The 2N7002-7-G is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60V and a continuous drain current of 210mA. The device exhibits a typical on-resistance of 7.5 Ohms at a gate-source voltage of 5V. Key electrical parameters include a gate threshold voltage of 2V, total gate charge of 352 pC, and power dissipation of 510 mW. Operating temperatures range from -55°C to +150°C. The component utilizes an SOT-23-3 surface-mount package.
Verify the specific manufacturer designation when sourcing this part number. Distributor listings frequently associate the suffix with Comchip Technology rather than Diodes Incorporated. Confirm the actual manufacturer and datasheet alignment before procurement to ensure compatibility with design specifications.
Select this component for low-voltage switching tasks requiring small form factors. The SOT-23-3 package supports high-density board layouts. Ensure the application current remains within the 210mA continuous limit and verify that the 60V breakdown rating exceeds peak circuit voltages.
This device belongs to the standard 2N7002 family of N-channel MOSFETs widely used in consumer electronics. While the base 2N7002 designation is generic across multiple manufacturers, the specific suffix indicates particular packaging or compliance variations defined by the supplier.
Direct substitutes include 2N7002 variants from other manufacturers such as ON Semiconductor or Comchip Technology. Verify pinout compatibility and ensure on-resistance values remain within acceptable limits for the target application.