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Product Detailed Parameters
- Description：MOSFET N-CH 60V 115MA SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：370mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The Diodes Incorporated 2N7002-7 is an N-channel enhancement mode MOSFET housed in a SOT-23 surface-mount package. It features a maximum drain-source voltage of 60V and a continuous drain current of 170mA at +25°C, rising to 210mA on high-copper PCBs. The device exhibits a maximum static drain-source on-resistance of 7.5Ω at VGS=5V and 10V. Total power dissipation reaches 540mW under optimized thermal conditions. Operating temperatures span from -55°C to +150°C.
Feature Summary
- Low on-state resistance for high efficiency
- Fast switching speed with low input capacitance
- Qualified to AEC-Q101 standards for high reliability
- Totally lead-free and fully RoHS compliant
Applications
- Motor control circuits
- Power management functions
- Load switching applications
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the standard 3,000-unit tape and reel packaging configuration. Confirm compliance requirements such as halogen-free status if applicable to your manufacturing process. Ensure the component meets the required automotive or industrial reliability standards based on the final application environment.
Selection Notes
Select this component when a compact N-channel MOSFET with 60V capability is required. Consider the 7.5Ω on-resistance limit for low-power switching tasks. Evaluate thermal performance against the 540mW dissipation rating for high-density designs. Verify that the gate threshold voltage range aligns with the driving logic levels used in the target circuit design.
Part Context
This part belongs to the 2N7002 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series is designed to minimize on-state resistance while maintaining superior switching performance. It utilizes silicon technology within a standard SOT-23 case material.
Replacement Considerations
Cross-reference with other 2N7002 variants from different manufacturers. Verify pinout compatibility and electrical parameter tolerances before substitution.
