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The onsemi 2N7002-F169 is an N-channel enhancement mode field-effect transistor (MOSFET) housed in a SOT-23-3 surface-mount package. It features a maximum drain-source voltage of 60 V and a continuous drain current of 115 mA at 25°C, with a maximum on-resistance of 7.5 Ω. The device operates within a junction temperature range of -55°C to +150°C and has a power dissipation rating of 200 mW.
Verify the specific suffix F169 against the manufacturer's official datasheet to confirm exact electrical tolerances and packaging specifications. Ensure compatibility with the target application's voltage and current requirements before integration.
Select this component for low-voltage, small-signal applications requiring reliable N-channel switching. Consider the 60V breakdown and 115mA continuous current limits when designing the circuit to ensure operation within safe operating areas.
This part belongs to the standard 2N7002 family of small signal MOSFETs. It utilizes DMOS technology to provide high cell density and low on-resistance. The device is designed for general-purpose switching in portable and battery-powered equipment.
Compatible substitutes include Nexperia 2N7002BKM and Diodes Incorporated 2N7002K-7. Verify pinout and electrical parameters match the original design requirements.