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Product Detailed Parameters
- Description：MOSFET N-CH 60V 115MA SOT23
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：115mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23 (TO-236AB)
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The Microchip Technology 2N7002-G is an N-Channel Enhancement-Mode Vertical DMOS FET housed in a 3-lead SOT-23 package. It features a Drain-to-Source Breakdown Voltage (BVDSS) of 60 V and a maximum Gate-to-Source Voltage of ±30 V. The device supports an On-State Drain Current (ID(ON)) of 500 mA at VGS = 10V and maintains a maximum Static Drain-to-Source On-State Resistance (RDS(ON)) of 7.5 Ω. Operating temperatures range from -55°C to +150°C, with a power dissipation rating of 0.36 W at 25°C ambient temperature.
Feature Summary
- Vertical DMOS structure providing high input impedance and positive temperature coefficient
- Free from thermal runaway and thermally induced secondary breakdown
- Integral source-drain diode for efficient switching applications
- Low threshold voltage suitable for logic-level drive requirements
Applications
- Motor Controls
- Converters
- Amplifiers
- Switches
- Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays)
Procurement Notes
Verify the specific ordering suffix 'G' indicates lead-free and RoHS-compliant packaging when sourcing this component. Confirm that the media type corresponds to the standard reel quantity of 3000 units per reel for the SOT-23 package configuration. Ensure compatibility with automated surface-mount assembly processes given the small form factor.
Selection Notes
Select this component for low-voltage, small-signal switching applications requiring fast switching speeds and low input capacitance. The vertical DMOS technology ensures excellent thermal stability and ease of paralleling for current sharing. Consider the 7.5 Ω maximum on-resistance when designing circuits where conduction losses must be minimized under full load conditions.
Part Context
This part belongs to the 2N7002 series of N-Channel Enhancement-Mode Vertical DMOS FETs manufactured by Microchip Technology. It utilizes a silicon-gate manufacturing process designed to combine bipolar transistor power handling capabilities with MOS device characteristics. The device is specifically engineered for applications demanding very low threshold voltages and high breakdown voltages.
Replacement Considerations
Cross-reference with other manufacturers offering the 2N7002 specification. Verify pinout compatibility (Gate, Source, Drain) and ensure equivalent electrical parameters such as BVDSS and RDS(ON) are met before substitution.
FAQ
What is the maximum continuous drain current for the 2N7002?
The maximum continuous drain current (ID(ON)) is 500 mA when the gate-to-source voltage is 10 V and the drain-to-source voltage is 25 V.
Does the 2N7002 include protection against secondary breakdown?
Yes, the device is explicitly described as being free from secondary breakdown due to its vertical DMOS structure and positive temperature coefficient.
