ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 60V 0.25A SOT23-3
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：250mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：25 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Download product information
Overview
The Comchip Technology 2N7002-G is a single N-channel enhancement-mode MOSFET housed in a SOT-23-3 surface-mount package. It features a drain-source breakdown voltage of 60 V and a continuous drain current rating of 115 mA. The device exhibits a maximum on-resistance of 7.5 Ohms at specified gate voltages, with a threshold voltage typically around 1 V. Operating within a temperature range of -55°C to +150°C, it dissipates up to 360 mW. Switching characteristics include rise and fall times of 20 ns, supported by a minimum forward transconductance of 300 mS.
Feature Summary
- N-channel enhancement mode operation for logic-level switching applications
- High-density cell design enabling low on-resistance and fast switching performance
- Robust construction suitable for small signal and power management circuits
Applications
- Small servo motor control
- Power MOSFET gate driver stages
- General-purpose low voltage switching circuits
Procurement Notes
Verify the specific manufacturer datasheet for the 2N7002-G to confirm exact electrical tolerances and thermal limits. Ensure the ordering suffix matches the required packaging format, such as cut tape or reel, as availability varies. Cross-reference pinout configurations with standard SOT-23 layouts to prevent assembly errors during surface mount placement.
Selection Notes
Select this component for designs requiring compact N-channel switching with moderate voltage ratings. The 60V breakdown and 115mA current capacity suit low-power load control tasks. Evaluate the 7.5 Ohm on-resistance against total power dissipation constraints to ensure thermal stability within the specified operating temperature range without excessive heat generation.
Part Context
This part belongs to the widely utilized 2N7002 series of N-channel silicon MOSFETs. Manufactured by Comchip Technology, it utilizes standard small-signal transistor technology optimized for surface mount integration. The device serves as a direct replacement for generic 2N7002 specifications found across various semiconductor manufacturers, maintaining compatibility with established circuit topologies.
Replacement Considerations
Compatible substitutes include the 2N7002L from onsemi and the ZVN3310FTA from Diodes Incorporated. Verify that alternative sources meet the same 60V voltage rating and SOT-23-3 package dimensions to ensure mechanical and electrical interchangeability.
