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Product Detailed Parameters
- Description：MOSFET N-CH 60V 115MA TO236
- Series：-
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-236
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The Vishay Siliconix 2N7002-T1-E3 is an N-channel enhancement mode MOSFET housed in a SOT-23 (TO-236) surface-mount package. It features a maximum drain-source voltage of 60 V and a continuous drain current of 0.115 A at 25°C. The device exhibits a typical gate threshold voltage of 2.1 V and a maximum on-resistance of 2.5 Ω at VGS = 10 V. Key electrical parameters include an input capacitance of 22 pF, turn-on time of 7 ns, and power dissipation of 0.2 W at 25°C.
Feature Summary
- Logic-level operation enabling direct interface with TTL and CMOS drivers without buffering
- Fast switching speed characterized by low input capacitance and rapid transition times
- Low offset voltage and minimal leakage currents for efficient signal handling
Applications
- Battery-operated systems requiring low-power switching
- Solid-state relay implementations
- Drivers for relays, solenoids, lamps, and displays
Procurement Notes
Verify the specific ordering suffix to confirm the tape-and-reel packaging configuration. Ensure the component meets RoHS compliance standards as indicated by the E3 designation. Cross-reference the manufacturer's datasheet revision history to validate the most current electrical characteristics before finalizing procurement specifications.
Selection Notes
Select this component for applications requiring small-signal logic-level switching within a compact footprint. Evaluate the thermal resistance and power dissipation limits against the expected load current. Confirm that the gate drive voltage aligns with the specified threshold requirements for optimal on-resistance performance.
Part Context
This part belongs to the 2N7000/2N7002 family of N-channel MOSFETs manufactured by Vishay Siliconix. While the base 2N7002 design utilizes a TO-226AA (SOT-23) package, the -T1-E3 suffix specifically denotes the reel-packaged variant compliant with environmental directives. This series serves as a standard general-purpose transistor for low-voltage digital control circuits.
Replacement Considerations
Compatible substitutes include the 2N7002NXAKR from Nexperia and the T2N7002AK from Toshiba Semiconductor. Verify pinout compatibility and ensure the alternative part meets or exceeds the 60 V breakdown voltage and 0.115 A current rating requirements.
