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Product Detailed Parameters
- Description：MOSFET N-CH 60V 115MA TO236
- Series：-
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-236
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The Vishay Siliconix 2N7002-T1-GE3 is an N-channel enhancement mode MOSFET housed in a SOT-23 (TO-236) surface-mount package. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 115 mA at 25 °C. The device exhibits a maximum on-resistance of 7.5 Ω at a gate-source voltage of 10 V, with a typical threshold voltage of 2.1 V. It supports a power dissipation of 200 mW and operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Direct logic-level interface capability for TTL and CMOS drivers
- Fast switching speed suitable for high-speed circuits
- Low input capacitance and low offset voltage
Applications
- Relay and solenoid driving
- Solid-state relay implementations
- Battery-operated systems
Procurement Notes
Verify the component status as End-of-Life or obsolete through official manufacturer channels before finalizing designs. Confirm that the specific suffix corresponds to the intended RoHS compliance and tape-and-reel packaging format. Ensure all static and dynamic electrical parameters are validated against the latest datasheet revision for your specific application requirements.
Selection Notes
Select this component when a compact N-channel switch is required for low-current applications driven directly by standard logic levels. Consider the thermal resistance and power dissipation limits carefully if operating near the maximum junction temperature. Verify that the 7.5 Ω on-resistance meets the voltage drop requirements for the specific load being controlled.
Part Context
This part belongs to the 2N7000/2N7002 family of general-purpose N-channel MOSFETs manufactured by Vishay Siliconix. These devices are widely recognized as industry-standard components for small-signal switching tasks. The TO-236 package provides a compact footprint suitable for dense printed circuit board layouts.
Replacement Considerations
Cross-reference with other manufacturers' 2N7002 equivalents such as Nexperia or Diodes Incorporated parts. Verify pinout compatibility and ensure that the replacement's on-resistance and threshold voltage specifications align with the original design constraints.
