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Product Detailed Parameters
- Description：MOSFET N-CH 60V 115MA SOT-23
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：7.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The onsemi 2N7002_L99Z is an N-channel enhancement mode field effect transistor manufactured using high cell density DMOS technology. It features a drain-source voltage of 60 V and a continuous drain current of 115 mA at 25°C. The device offers low on-state resistance, rugged reliability, and fast switching performance. It operates within a temperature range of -55 to 150 °C and is housed in a SOT-23 package.
Feature Summary
- High density cell design for low RDS(ON)
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
Applications
- Small servo motor control
- Power MOSFET gate drivers
- Low voltage switching applications
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and handling specifications. Ensure compatibility with standard surface mount assembly processes. Confirm RoHS compliance status through the latest datasheet revision before finalizing procurement plans.
Selection Notes
Select this component for low voltage, low current applications requiring efficient switching. Evaluate thermal resistance characteristics relative to the expected ambient operating conditions. Consider the maximum power dissipation limits when designing heat management strategies for dense circuit layouts.
Part Context
This part belongs to the 2N700X series of general-purpose N-channel MOSFETs. These devices are widely used as logic level switches due to their ability to be driven directly by microcontrollers. The series is known for its longevity and broad availability across multiple semiconductor manufacturers.
Replacement Considerations
Compatible substitutes include Vishay 2N7002K-T1-GE3 and Diotec 2N7002W. Verify pinout alignment and electrical parameter margins before implementation.
