2N7002A-7

$0.15

Description：MOSFET N-CH 60V 180MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:871060d3eeae Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 180MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：6Ohm @ 115mA, 5V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：23 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：370mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002A-7

Overview

The 2N7002A-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a SOT-23 surface-mount package. It features a drain-source voltage (BVDSS) of 60V and a maximum continuous drain current (ID) of 220mA at +25°C on high-copper PCBs. The device exhibits a low static drain-source on-resistance (RDS(ON)) of 6Ω max at VGS = 5V and 10V. Electrical characteristics include a gate threshold voltage (VGS(TH)) ranging from 1.2V to 2.0V, input capacitance (Ciss) of 23pF, and total power dissipation up to 540mW under specific thermal conditions.

Feature Summary

Low on-state resistance for high efficiency power management
Fast switching speed with low input capacitance
Gate protected against electrostatic discharge up to 1.2kV HBM and 1kV CDM
Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

Motor control circuits
Power management functions
High efficiency switching applications

Procurement Notes

Verify the exact part number suffix matches the required packaging quantity. Confirm that the component meets specific environmental standards such as RoHS or AEC-Q if automotive use is intended. Check datasheet notes regarding thermal performance dependencies on PCB copper coverage and pad layout dimensions.

Selection Notes

Select this component when a small surface-mount N-channel MOSFET with logic-level drive capability is required. Ensure the application voltage does not exceed the 60V drain-source rating. Consider the thermal resistance values based on the actual PCB copper area available for heat dissipation during steady-state operation.

Part Context

This device belongs to the 2N7002 family of N-channel enhancement mode MOSFETs. It shares similar pinouts and basic electrical profiles with other variants like the standard 2N7002 but offers optimized on-resistance characteristics. The -7 suffix indicates it is supplied in tape and reel packaging containing 3,000 units per reel.