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Product Detailed Parameters
- Description：MOSFET SOT23 N 60V 2OHM 150C
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：280mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3 (TO-236)
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The Diotec Semiconductor 2N7002A is an N-channel enhancement mode field-effect transistor housed in a SOT-23 (TO-236) surface-mount package. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 115 mA at 25°C ambient temperature. The device exhibits a maximum on-state resistance of 5 Ω at VGS = 10 V and 7 Ω at VGS = 5 V, with a gate-source threshold voltage ranging from 1 V to 2.5 V. Power dissipation is rated at 225 mW, supporting a maximum junction temperature of +150°C.
Feature Summary
- Low on-state resistance for efficient switching
- Fast switching times suitable for signal processing
- Logic level compatibility with low gate threshold voltage
Applications
- Signal processing circuits
- Driver stages
- Logic level converters
Procurement Notes
Verify the specific suffix designation when ordering, as the standard 2N7002 differs from automotive variants like the -Q or -AQ versions which carry AEC-Q101 compliance or qualification status. Confirm RoHS compliance and REACH registration requirements with the supplier prior to procurement to ensure alignment with project specifications.
Selection Notes
Select this component for applications requiring a compact N-channel MOSFET with logic-level drive capability. Ensure the design accounts for the 225 mW power dissipation limit and the thermal resistance characteristics relative to the PCB copper pad area. Verify that the 60 V drain-source voltage rating provides adequate margin for the intended operating conditions.
Part Context
This component belongs to the 2N7002 family of N-channel enhancement mode FETs manufactured by Diotec Semiconductor. It serves as a general-purpose small-signal switch available in commercial and industrial grades. Automotive-grade variants exist with specific suffixes indicating AEC-Q101 compliance or qualification status.
Replacement Considerations
Cross-reference with other 2N7002-compatible parts from different manufacturers, ensuring matching pinout, voltage ratings, and package dimensions. Verify electrical parameters such as RDS(on) and VGS(th) against the original datasheet specifications.
