2N7002AK-QR

$0.16

Description：MOS DISCRETES
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4e44b1e1b6cc Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOS DISCRETES
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：240mA
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：0.21 nC @ 10 V
Vgs (Max)：20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：320mW
Operating Temperature：175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-236AB
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002AK-QR

Overview

The Nexperia 2N7002AK-Q is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It operates within a 60 V drain-source voltage range and supports a continuous drain current of 240 mA at 25 °C. The device features a maximum on-state resistance of 3 Ω at VGS = 10 V and 100 mA. It is housed in a compact SOT23 surface-mounted package with three terminals. The component is qualified to AEC-Q101 standards and supports an extended junction temperature range up to 175 °C.

Feature Summary

Logic-level compatible for direct interface with standard logic circuits
Extended thermal capability supporting junction temperatures up to 175 °C
Integrated ElectroStatic Discharge (ESD) protection mechanisms
Automotive Electronics Council (AEC-Q101) qualification for automotive reliability

Applications

Relay driver
High-speed line driver
Low-side load switch
Switching circuits

Procurement Notes

Verify the specific ordering suffix matches the required automotive grade specification. Confirm that the SOT23 package dimensions align with the target PCB footprint. Ensure the design accounts for the 175 °C maximum junction temperature rating during thermal analysis. Check for any regional export control requirements applicable to this semiconductor component.

Selection Notes

Select this component when automotive-grade reliability and high-temperature operation are required. The low gate charge and fast switching characteristics make it suitable for high-frequency applications. Consider the 60 V breakdown voltage and 240 mA current limits to ensure adequate headroom for the intended load conditions.

Part Context

This part belongs to the 2N7002 series of N-channel MOSFETs manufactured by Nexperia. It represents the automotive-qualified variant designed for robust performance in demanding environments. The device leverages Trench MOSFET technology to achieve low on-resistance within a small plastic surface-mount package.

Replacement Considerations

Direct pin-compatible replacements include the standard commercial grade 2N7002,215 or other manufacturers' equivalents such as BSS138 variants. Verify that substitute components meet the AEC-Q101 qualification if automotive usage is mandated. Compare thermal resistance values to ensure equivalent heat dissipation capabilities.