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Product Detailed Parameters
- Description：2N7002AKM-Q/SOT883/XQFN3
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：3Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id：2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：315 pC @ 30 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：9.2 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：710mW (Ta), 3.1W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-883
- Package / Case：SC-101, SOT-883
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Overview
The Nexperia 2N7002AKM-Q is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a leadless ultra-small DFN1006-3 (SOT883) package with dimensions of 1 mm x 0.6 mm x 0.48 mm. The device features a drain-source voltage rating of 60 V and a continuous drain current of 350 mA at 25 °C. Key electrical parameters include a maximum on-state resistance of 3 Ω at VGS = 10 V, a gate-source voltage range of -20 V to 20 V, and a junction temperature operating range from -55 °C to 150 °C.
Feature Summary
- Logic-level compatible for direct interface with standard logic outputs
- Very fast switching performance enabled by Trench MOSFET technology
- Integrated ElectroStatic Discharge (ESD) protection capabilities
- Qualified according to AEC-Q101 automotive standards
Applications
- Relay driver circuits
- High-speed line drivers
- Low-side load switches
- General switching circuits
Procurement Notes
Verify the specific ordering suffix matches the required package variant and qualification level. Confirm that the DFN1006-3 footprint aligns with your PCB design constraints. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under your expected ambient temperature conditions.
Selection Notes
Select this component when a compact surface-mount solution is required for low-voltage switching applications. The small SOT883 package is suitable for space-constrained designs. Verify that the 60 V breakdown voltage and 350 mA current limits meet your circuit requirements. Consider the logic-level compatibility if driving directly from microcontrollers or standard logic gates.
Part Context
This part belongs to the 2N7002 series of N-channel MOSFETs manufactured by Nexperia. It represents a miniaturized version of the traditional TO-236AB package, offering similar electrical characteristics in a significantly smaller footprint. The device is designed for general-purpose switching and amplification tasks in consumer electronics and automotive environments.
Replacement Considerations
Direct replacements must match the DFN1006-3 (SOT883) package and pinout configuration. Verify that substitute components meet or exceed the 60 V drain-source voltage and 350 mA current ratings. Ensure equivalent on-state resistance and switching speeds are maintained for circuit performance consistency.
