2N7002AQ-7

$0.20

Description：MOSFET N-CH 60V 180MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:854473d922af Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 180MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：5Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：23 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：370mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002AQ-7

Overview

The 2N7002AQ-7 is an N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 180mA at +25°C. The device has a maximum on-resistance of 6Ω at VGS=5V and a gate threshold voltage up to 2.0V. It operates within a temperature range of -55°C to +150°C, dissipates up to 370mW, and utilizes a SOT-23 package.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive use
Features ESD protected gate rated at 1.2kV HBM
Totally lead-free and fully RoHS compliant
Halogen- and antimony-free green device

Applications

Motor control systems
Power management functions

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets the required AEC-Q101 qualification and IATF 16949 manufacturing facility standards for your automotive application. Ensure compatibility with J-STD-020 moisture sensitivity level 1 requirements during assembly.

Selection Notes

Select this component when designing circuits requiring AEC-Q101 qualified N-channel MOSFETs for automotive environments. It is suitable for low-voltage switching applications where a 60V breakdown and 180mA continuous current are sufficient. Consider its 6Ω on-resistance and 2.0V maximum threshold voltage for logic-level drive compatibility in power management designs.

Part Context

This part belongs to the 2N7002 family of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It is specifically engineered to meet stringent automotive reliability standards. The device is housed in a compact SOT-23 surface mount package, making it appropriate for space-constrained circuit board layouts in modern electronic assemblies.

Replacement Considerations

Check datasheets for alternative parts to ensure matching V(BR)DSS, ID ratings, and RDS(ON) specifications. Verify that any substitute also holds AEC-Q101 qualification if automotive compliance is mandatory. Confirm pinout compatibility and thermal resistance characteristics before implementation.