ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 60V 350MA TO236AB
- Series：*
- Mfr：UMW
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：115mA
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：225W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3 (TO-236)
- Package / Case：TO-236-3, SC-59, SOT-23-3
Download product information
Overview
The UMW 2N7002B is an N-channel enhancement mode MOSFET housed in a SOT-23 plastic package. It features a maximum drain-source voltage of 60V and a continuous drain current of 115mA. The device offers low on-resistance, specified as 5Ω at VGS=10V and 7Ω at VGS=5V. Key electrical parameters include a gate threshold voltage range of 1V to 2.5V, input capacitance of 50pF, and output capacitance of 25pF. Power dissipation is rated at 0.225W with a junction-to-ambient thermal resistance of 556°C/W.
Feature Summary
- High density cell design for low RDS(ON)
- Voltage controlled small signal switch
- Rugged and reliable construction
- High saturation current capability
Applications
- Load Switch for Portable Devices
- DC/DC Converter
Procurement Notes
Verify the specific manufacturer marking code '7002' against official UMW documentation to confirm authenticity. Ensure the component matches the SOT-23 physical dimensions provided in the datasheet drawing. Check for RoHS compliance status if required by your assembly process. Confirm that the supplier provides traceability data consistent with the part number 2N7002B.
Selection Notes
Select this component for low-voltage switching applications requiring compact surface-mount packaging. The 60V rating suits portable electronics and general-purpose logic-level control. Consider the 115mA continuous current limit when designing load circuits. The SOT-23 form factor supports high-density PCB layouts compared to larger through-hole alternatives.
Part Context
This N-channel MOSFET belongs to the standard 2N7002 family of small-signal transistors. It serves as a fundamental building block for digital and analog switching circuits. The device utilizes trench or high-density cell technology to achieve efficient conduction characteristics within a minimal footprint suitable for modern consumer electronics.
Replacement Considerations
Cross-reference with other manufacturers offering the 2N7002 designation in SOT-23 packages. Verify pinout compatibility (Gate, Source, Drain) before substitution. Compare RDS(on) and VGS(th) specifications to ensure equivalent performance in the target circuit application.
