2N7002BKMB,315

$0.17

Description：MOSFET N-CH 60V 450MA DFN1006B-3
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:62bc4fa104f4 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 450MA DFN1006B-3
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.6Ohm @ 450mA, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：360mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DFN1006B-3
Package / Case：3-XFDFN

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2N7002BKMB,315

Overview

The Nexperia 2N7002BKMB,315 is a single N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a leadless ultra-small DFN1006B-3 (SOT883B) plastic package with dimensions of 1.0 x 0.6 x 0.37 mm. The device supports a drain-source voltage of 60 V and a continuous drain current of 450 mA at 25 °C. Key electrical characteristics include a typical on-state resistance of 11.6 Ω at VGS=10V and a gate-source threshold voltage ranging from 1.1 V to 2.1 V. It offers ESD protection up to 2 kV HBM and operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

Very fast switching capability enabled by Trench MOSFET technology
Logic-level compatible for direct interface with standard logic circuits
ESD protection rated up to 2 kV according to Human Body Model standards
Ultra-thin package profile with a height of 0.37 mm

Applications

Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits

Procurement Notes

Verify the complete part number including the ordering suffix ',315' to ensure correct packaging configuration. Confirm that the application environment remains within the specified thermal limits, as power dissipation is sensitive to ambient temperature. Ensure PCB footprint matches the SOT883B outline for proper soldering and thermal performance.

Selection Notes

Select this component when space constraints require an ultra-small leadless package. It is suitable for low-voltage switching applications requiring logic-level compatibility. Consider the specific on-resistance values at intended gate drive voltages. Verify that the 60 V rating provides sufficient margin for the target circuit's peak voltages.

Part Context

This device belongs to Nexperia's portfolio of small-signal N-channel MOSFETs designed for general-purpose switching. It utilizes advanced Trench technology to achieve fast switching speeds within a compact form factor. The product is distinct from automotive-qualified variants unless explicitly stated otherwise in the documentation.