2N7002BKV,115

Overview

The Nexperia 2N7002BKV is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in an ultra-small SOT666 surface-mounted plastic package with a 0.5 mm pitch and dimensions of 1.6 mm x 1.2 mm x 0.55 mm. The device provides two independent channels, each rated for a drain-source voltage of 60 V and a continuous drain current of 340 mA at 25 °C. Key electrical characteristics include a maximum gate-source voltage of ±20 V, a typical on-state resistance of 1 Ω at VGS = 10 V, and a total gate charge of 0.5 nC. The component supports junction temperatures up to 150 °C and includes electrostatic discharge protection exceeding 2 kV HBM.

Feature Summary

• Logic-level compatible design enabling direct interfacing with standard digital logic circuits.
• Very fast switching performance achieved through advanced Trench MOSFET technology.
• Integrated electrostatic discharge protection rated up to 2 kV Human Body Model.

Applications

• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm the exact package variant and reel specifications. Ensure that the procurement channel sources products directly from authorized distributors or the manufacturer to guarantee authenticity. Cross-reference the marking code 'ZG' with the latest datasheet revision to validate the component identity upon receipt.

Selection Notes

Select this component when space-constrained designs require dual N-channel switching capabilities within the SOT666 footprint. The low on-state resistance and high threshold voltage compatibility make it suitable for applications requiring efficient signal switching driven by standard logic levels. Evaluate thermal dissipation requirements carefully, as the small package size limits power handling compared to larger packages.

Part Context

This part belongs to Nexperia's Trench MOSFET series, which utilizes proprietary trench gate technology to optimize switching speed and conduction losses. The 2N7002BKV specifically addresses the need for compact dual-channel solutions in portable electronics and dense printed circuit board layouts where individual single-channel transistors would consume excessive board area.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.

FAQ

What is the pin configuration for the 2N7002BKV?

Pin 1 is Source 1, Pin 2 is Gate 1, Pin 3 is Drain 2, Pin 4 is Source 2, Pin 5 is Gate 2, and Pin 6 is Drain 1.

What is the maximum peak drain current rating?

The maximum peak drain current (IDM) is 1.2 A for a single pulse duration of 10 µs or less at 25 °C.

How does the device handle electrostatic discharge?

The device features integrated ESD protection capable of withstanding up to 2 kV according to the Human Body Model (HBM) testing standard.