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Product Detailed Parameters
- Description：MOSFET N-CH 60V 310MA SOT323
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：310mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：275mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The Nexperia 2N7002BKW,115 is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a compact SOT323 (SC-70) surface-mounted plastic package with three leads. The device supports a maximum drain-source voltage of 60 V and a continuous drain current of 310 mA at 25 °C. Key electrical parameters include a typical on-state resistance of 1 Ω at VGS=10 V and a total gate charge of 0.5 nC. It features ESD protection up to 2 kV HBM and is qualified under the AEC-Q101 automotive standard.
Feature Summary
- Logic-level compatible for direct interface with standard logic circuits
- Very fast switching performance enabled by Trench MOSFET technology
- Integrated electrostatic discharge protection rated up to 2 kV HBM
- Qualified for automotive applications according to AEC-Q101 standards
Applications
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when a small form factor is required alongside automotive reliability. The SOT323 package suits space-constrained designs. Ensure the application operates within the 60 V drain-source limit and 310 mA current rating. Verify that the logic level driving the gate aligns with the specified threshold voltages for optimal switching efficiency.
Part Context
This part belongs to Nexperia's Trench MOSFET series, designed for efficient power switching in compact packages. The 2N7002BKW variant specifically targets applications requiring robust ESD handling and automotive qualification. It serves as a discrete solution for low-power switching tasks where size and switching speed are critical design constraints.
Replacement Considerations
Check pinout compatibility and package dimensions against existing designs. Verify that alternative parts meet or exceed the 60 V breakdown voltage and 310 mA current requirements. Confirm thermal resistance values match the PCB layout constraints to ensure safe operating junction temperatures.
