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Product Detailed Parameters
- Description：MOSFET N-CH 60V 300MA TO236AB
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.3 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：55 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-236AB
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The Nexperia 2N7002CK,215 is an N-channel enhancement mode MOSFET housed in a SOT-23 (TO-236AB) surface-mount package. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 300 mA. The device exhibits a maximum on-resistance of 1.6 Ω at a gate-source voltage of 10 V. Gate-source voltage limits are specified between -20 V and +20 V. Power dissipation is rated at 350 mW, with an operating temperature range spanning from -55 °C to +150 °C.
Feature Summary
- Utilizes TrenchMOS technology for enhanced switching performance
- Logic-level compatible for direct interface with standard logic circuits
- Designed for high-speed line driving and low-side load switching applications
Applications
- Relay driver circuits
- High-speed line drivers
- Low-side load switches
- General purpose switching circuits
Procurement Notes
Verify the specific suffix 'CK' against official Nexperia documentation to confirm exact electrical tolerances and packaging specifications. Ensure compatibility with RoHS directives and REACH regulations before integration. Confirm that the SOT-23 footprint matches the target PCB design constraints. Validate thermal management requirements against the 350 mW power dissipation rating under expected operating conditions.
Selection Notes
Select this component when a compact N-channel MOSFET with moderate voltage handling is required. The 60 V rating suits low-voltage signal switching and battery-powered systems. Consider the 1.6 Ω on-resistance for efficiency in low-current paths. The SOT-23 package offers space-saving advantages for dense board layouts compared to larger transistor packages.
Part Context
This part belongs to the Nexperia 2N7002 series of small-signal MOSFETs. The series is widely used in consumer electronics and industrial control due to its reliability and cost-effectiveness. The CK variant specifically denotes a particular manufacturing batch or specification tier within the broader 2N7002 family, ensuring consistent performance across production runs.
Replacement Considerations
Direct substitutes include the 2N7002,215 and 2N7002P,215. Verify pinout compatibility and electrical parameter alignment before substitution. Alternative packages such as SC-70 may require schematic redesign.
